Core-level shifts at B- and Al-doped 6H-SiC studied by XPS

Surface and Interface Analysis

Volumn 27, Issue 3, 1999, Pages 136-141

  Oswald, S ^a   Wirth, H ^b  

^a IFW DRESDEN   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHIZATION; ANNEALING; BINDING ENERGY; BORON; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ION IMPLANTATION; SILICON CARBIDE; SPUTTERING; SURFACES;

CORE LEVEL SHIFTS; DEPTH PROFILING; ELECTRONEGATIVITY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0033298384     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199903)27:3<136::AID-SIA492>3.0.CO;2-Z     Document Type: Article

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