Laser-doping of silicon carbide for p-n junction and LED fabrication

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 4, 2007, Pages 1147-1157

  Bet, Sachin ^a   Quick, Nathaniel ^b   Kar, Aravinda ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b AppliCote Associates LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER-DOPING; OPTICAL INTERFEROMETER PROFILOMETER SCAN; P-N JUNCTION;

DIFFUSION; DOPING (ADDITIVES); ELECTROLUMINESCENCE; ENERGY GAP; ION IMPLANTATION; LIGHT EMITTING DIODES; MELTING POINT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS;

SILICON CARBIDE;

EID: 34547163535     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200622466     Document Type: Conference Paper

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