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Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

Room temperature photoluminescence at 4.5 μm from InAsN

(5) Zhuang, Q a Godenir, A M R a Krier, A a Lai, K T b Haywood, S K b

a LANCASTER UNIVERSITY (United Kingdom)

b UNIVERSITY OF HULL (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; GROWTH RATE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE;

CARRIER RECOMBINATION; GROWTH CONDITIONS; NITROGEN INCORPORATION;

INDIUM COMPOUNDS;

EID: 41549103838 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2896638 Document Type: Article

Times cited : (42)

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