InNAs - A new optoelectronic material for mid-infrared applications

Opto-Electronics Review

Volumn 11, Issue 4, 2003, Pages 321-326

  Osinski M ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

Dilute nitrides; Dimethylhydrazine; InNAs; Mid infrared emitters; MOCVD; Multiple quantum wells

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; INFRARED DEVICES; LASERS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHASE COMPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; MID-INFRARED EMITTERS; MULTIPLE QUANTUM WELLS (MQW);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 1642577189     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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