Optical characterization of InAsN single quantum wells grown by RF-MBE

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 12, 2004, Pages 2791-2794

  Kuroda, M ^a   Katayama, R ^a   Onabe, K ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; X RAY DIFFRACTION ANALYSIS;

BANDGAP BOWING; BANDGAP ENERGY; OPTICAL TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 7444266715     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200405032     Document Type: Conference Paper

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