Growth of InNAs on GaAs(1 0 0) substrates by molecular-beam epitaxy

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 471-475

  Sakai, Shiro ^a   Cheng, Tin S ^b   Foxon, Thomas C ^b   Sugahara, Tomoya ^a   Naoi, Yoshiki ^a   Naoi, Hiroyuki ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

III nitride; III V nitride; InNAs; MBE

Indexed keywords

ENERGY GAP; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

TERNARY ALLOYS;

INDIUM ALLOYS;

EID: 0032092033     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00333-9     Document Type: Article

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