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Volumn 278, Issue 1-4, 2005, Pages 254-258
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Growth and characterization of InAsN alloy films and quantum wells
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Author keywords
A1. Optical properties; A1. X ray diffraction; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Thin film; B1. Dilute nitrides
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Indexed keywords
CRYSTAL GROWTH;
MOLECULAR BEAM EPITAXY;
NITRIDES;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
THERMAL EFFECTS;
X RAY DIFFRACTION ANALYSIS;
BAND EDGE;
BURSTEIN-MOSS EFFECTS;
CONDUCTION BAND;
DILUTE NITRIDES;
THIN FILMS;
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EID: 18444372979
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.01.075 Document Type: Conference Paper |
Times cited : (32)
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References (9)
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