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Volumn 22, Issue 4, 2007, Pages 408-412
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Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL STRUCTURE;
EPITAXIAL GROWTH;
LOW TEMPERATURE EFFECTS;
PHOTOLUMINESCENCE;
SUBSTRATES;
METAMORPHIC BUFFERS;
METAMORPHIC LAYERS;
PHOTOLUMINESCENCE INTENSITY;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 34047231760
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/22/4/020 Document Type: Article |
Times cited : (15)
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References (22)
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