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Volumn 33, Issue 14, 2000, Pages 1656-1661

Novel LED module for the detection of H2S at 3.8 μm

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; GAS ABSORPTION; GAS DETECTORS; HYDROGEN SULFIDE; INDIUM ALLOYS; INFRARED DETECTORS; LIGHT ABSORPTION; LIQUID PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034225881     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/33/14/304     Document Type: Article
Times cited : (26)

References (17)
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    • Safety, Mining & Engineering. http://www.instanet.com/∼pfc/files/h2s.htm
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    • InAsSbP/InAs LEDs for the 3.3-5.5 μm spectral range
    • Special Issue on Mid-IR devices and materials and papers therein; see also 144 for additional related papers
    • See for example: Matveev B, Zotova N V, Karandashov S A, Remennyi M, Il'inskaya N, Stus N M, Shustov V, Talalakin G N and Malinen J 1998 InAsSbP/InAs LEDs for the 3.3-5.5 μm spectral range IEE Proc. Optoelectron. 145 254-6 (Special Issue on Mid-IR devices and materials and papers therein; see also 144 for additional related papers)
    • (1998) IEE Proc. Optoelectron , vol.145 , pp. 254-256
    • Matveev, B.1    Zotova, N.V.2    Karandashov, S.A.3    Remennyi, M.4    Il'inskaya, N.5    Stus, N.M.6    Shustov, V.7    Talalakin, G.N.8    Malinen, J.9
  • 5
    • 0041439146 scopus 로고    scopus 로고
    • Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices
    • Pullin M J, Hardaway H R, Heber J D and Phillips C C 1999 Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices Appl. Phys. Lett. 75 3437-9
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 3437-3439
    • Pullin, M.J.1    Hardaway, H.R.2    Heber, J.D.3    Phillips, C.C.4
  • 6
    • 0032178871 scopus 로고    scopus 로고
    • Room temperature InPsb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE
    • Stein A, Puttjer D, Behres A and Heime K 1998 IEE Proc. Optoelectronics Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE 14 257-60
    • (1998) IEE Proc. Optoelectronics , vol.14 , pp. 257-260
    • Stein, A.1    Puttjer, D.2    Behres, A.3    Heime, K.4
  • 7
    • 0033640143 scopus 로고    scopus 로고
    • Powerful interface light emitting diodes for methane gas detection
    • Krier A and Sherstnev V V 2000 Powerful interface light emitting diodes for methane gas detection J. Phys. D: Appl. Phys. 33 101-6
    • (2000) J. Phys. D: Appl. Phys. , vol.33 , pp. 101-106
    • Krier, A.1    Sherstnev, V.V.2
  • 8
    • 0032644463 scopus 로고    scopus 로고
    • High power 4.6 μm LEDs for CO detection grown by LPE using rare earth gettering
    • Krier A, Gao H, Sherstnev V and Yakovlev Yu 1999 High power 4.6 μm LEDs for CO detection grown by LPE using rare earth gettering Electron. Lett. 35 1665-7
    • (1999) Electron. Lett. , vol.35 , pp. 1665-1667
    • Krier, A.1    Gao, H.2    Sherstnev, V.3    Yakovlev, Yu.4
  • 10
    • 0032484780 scopus 로고    scopus 로고
    • Detection of nitrogen dioxide using a room temperature operation mid-infrared InSb light-emitting diode electron
    • Wang C H, Crowder J G, Mannheim V, Ashley T, Dutton D T, Johnson A D, Pryce G J and Smith S D 1998 Detection of nitrogen dioxide using a room temperature operation mid-infrared InSb light-emitting diode Electron. Lett. 34 300-1
    • (1998) Lett. , vol.34 , pp. 300-301
    • Wang, C.H.1    Crowder, J.G.2    Mannheim, V.3    Ashley, T.4    Dutton, D.T.5    Johnson, A.D.6    Pryce, G.J.7    Smith, S.D.8
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    • http://www.ioffe.rssi.ru/
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    • Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.