Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001)GaSb substrates

Journal of Applied Physics

Volumn 86, Issue 2, 1999, Pages 835-840

  Ehsani, H ^a   Bhat, I ^a   Gutmann, R J ^a   Charache, G ^b   Freeman, M ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; RESIDUAL STRESSES; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; STRESS RELAXATION; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

GALLIUM ANTIMONIDE; GALLIUM INDIUM ANTIMONIDE;

SEMICONDUCTING FILMS;

EID: 0032613541     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370811     Document Type: Article

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