Strain relaxation and surface roughness of in xAl 1-xAs graded buffer layers grown on InP for 6.05 Å applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2303-2308

  Noori, A M ^a   Sandhu, R S ^a,b   Hayashi, S L ^a,b   Meserole, E D ^a   Hardev, V ^a   Cavus, A ^b   Lange, M ^b   Monier, C ^b   Hsing, R ^b   Sawdai, D ^b   Wojtowicz, M ^b   Block, T R ^b   Gutierrez Aitken, A ^b   Goorsky, M S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; GROWTH TEMPERATURE; STRAIN RELAXATION; THREADING DISLOCATIONS;

INDIUM; LATTICE CONSTANTS; MELTING; MOLECULAR BEAM EPITAXY; STRAIN; SURFACE ROUGHNESS; THERMAL EFFECTS;

INDIUM COMPOUNDS;

EID: 9744243516     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1782640     Document Type: Article

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