Surface passivation of AlGaN/GaN HFETs using AlN layer deposited by Reactive Magnetron Sputtering

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 69-73

  Liu, Y ^a   Bardwell, J A ^a   McAlister, S P ^a   Rolfe, S ^a   Tang, H ^a   Webb, J B ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; NITRIDES; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; DC CHARACTERISTICS; GATE-LEAKAGE CURRENT; INSULATING LAYERS; METAL-INSULATOR-SEMICONDUCTORS; PASSIVATION LAYER; REACTIVE MAGNETRON SPUTTERING; SURFACE PASSIVATION;

PASSIVATION;

EID: 84875103556     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390119     Document Type: Conference Paper

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