Effect of passivation on AlGaN/GaN HEMT device performance

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn , Issue , 2000, Pages 357-363

  Tilak, V ^a   Green, B ^a   Kim, H ^a   Dimitrov, R ^a   Smart, J ^a   Schaff, W J ^a   Shealy, J R ^a   Eastman, L F ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GALLIUM NITRIDE; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE; THICKNESS MEASUREMENT;

ALUMINUM GALLIUM NITRIDE; BREAKDOWN VOLTAGES; BUFFERED OXIDE ETCH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034424999     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)