Structural relaxation of amorphous silicon carbide thin films in thermal annealing

Thin Solid Films

Volumn 516, Issue 12, 2008, Pages 3855-3861

  Xue, Kun ^a   Niu, Li Sha ^a   Shi, Hui Ji ^a   Liu, Jiwen ^b  

^a FML   (China)

^b Tianjin Key Laboratory for Photoelectric Materials and Devices   (China)

Author keywords

Recrystallization; SiC thin films; Structural relaxation; Thermal annealing

Indexed keywords

AMORPHOUS SILICON; SILICON CARBIDE; STRUCTURAL RELAXATION;

SIC THIN FILMS; THERMAL ANNEALING;

THIN FILMS;

EID: 40749085961     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.194     Document Type: Article

References (25)

1. Liao F., Girshick S.L., Mook W.M., Gerberich W.W., and Zachariah M.R. Appl. Phys. Lett. 86 (2005) 171913
2. Valentini A., Convertino A., Alvisi M., Cingolani R., Ligonzo T., Lamendola R., and Tapfer L. Thin Solid Films 335 (1998) 80
3. Heera V., Prokert F., Schell N., Seifarth H., Fukarek W., Voelskow M., and Skorupa W. Appl. Phys. Lett. 70 (1997) 3531
4. Takeshita T., Kurata Y., and Hasegawa S. J. Appl. Phys. 71 (1992) 5395
5. Finochhi F., Galli G., Parrinello M., and Bertoni C.M. Phys. Rev. Lett. 68 (1992) 3044
6. Mui K., and Smith F.W. Phys. Rev., B 35 (1987) 8080
7. Mélinon P., Kéghélian P., Perez A., Ray C., Lermé J., Pellarin M., Broyer M., Boudeulle M., Champagnon B., and Rousset J.L. Phys. Rev., B 58 (1998) 16481
8. Ishimaru M., Bae I., Hirotsu Y., Matsumura S., and Sickafus K.E. Phys. Rev. Lett. 89 (2002) 055502
9. Meneghini C., Boscherini F., Evangelisti F., and Mobilio S. Phys. Rev., B 50 (1994) 11535
10. Serre C., Calvo-Barrio L., Pérez-Rodríguez A., Romano-Rodríguez A., Morante J.R., Pacaud Y., Kögler R., Heera V., and Skorupa W. J. Appl. Phys. 79 (1996) 6907
11. Schwan J., Ulrich S., Batori V., Ehrhardt H., and Silva S.R.P. J. Appl. Phys. 80 (1996) 440
12. Ferrari A.C., and Robertson J. Phys. Rev., B 61 (2000) 14095
13. Cho N.H., Veirs D.K., Ager III J.W., Rubin M.D., Hopper C.B., and Bogy D.B. J. Appl. Phys. 71 (1992) 2243
14. Lu W.J., Mitchel W.C., Thornton C.A., Collins W.E., Landis G.R., and Smith S.R. J. Electron. Soc. 150 (2003) G177
15. Lu W.J., Mitchel W.C., Thornton C.A., Landis G.R., and Collins W.E. J. Electron. Mater. 32 (2003) 426
16. Höfgen A., Heera V., Eichhorn F., and Skorupa W. J. Appl. Phys. 84 (1998) 4769
17. Calcagno L., Musumeci P., Roccaforte F., Bongiorno C., and Foti G. Thin Solid Films 411 (2002) 298
18. Gracin D., Radić N., Ivanda M., Andreić Ž., and Praček B. Thin Solid Films 317 (1998) 206
19. Tang H.D., Tan S.H., Huang Z.R., Dong S.M., and Jiang D.L. Surf. Coat. Technol. 197 (2005) 161
20. Avila A., Montero I., Galán L., Ripalda J.M., and Levy R. J. Appl. Phys. 89 (2001) 212
21. Ferrari A.C., and Robertson J. Phys. Rev., B 64 (2001) 075414
22. Tuinstra F., and Koenig J. J. Chem. Phys. 53 (1970) 1126
23. Lu W.J., Feldman L.C., Song Y., Dhar S., Collins W.E., Mitchel W.C., and Williams J.R. Appl. Phys. Lett. 85 (2004) 3495
24. Costa A.K., Camargo Jr. S.S., and Achete C.A. Thin Solid Films 377 (2000) 243
25. Brenner D.W., Shenderova O.A., Harrison J.A., Stuart S.J., Ni B., and Sinnott S.B. J. Phys., Condens. Matter 14 (2002) 783