Doping characterization of InAsGaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Zhao, Z Y ^a   Zhang, W M ^a   Yi, C ^a   Stiff Roberts, A D ^a   Rodriguez, B J ^b   Baddorf, A P ^b  

^a Duke University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); HETEROJUNCTIONS; INFRARED RADIATION; PHOTODETECTORS;

DOPING CONCENTRATIONS; SCANNING CAPACITANCE MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 40549131888     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2889938     Document Type: Article

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