Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy

Infrared Physics and Technology

Volumn 51, Issue 2, 2007, Pages 131-135

  Zhao, Z Y ^a   Yi, C ^a   Stiff Roberts, A D ^a   Hoffman, A J ^b   Wasserman, D ^b   Gmachl, C ^b  

^a Duke University   (United States)

^b Princeton University   (United States)

Author keywords

Deep level defect center; Doping; Fourier transform infrared spectroscopy; Polarization dependent absorbance spectrum; Quantum dot infrared photodetector

Indexed keywords

DEFECT DENSITY; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDIUM ARSENIDE; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE;

DEEP LEVEL DEFECT CENTERS; DEFECT CENTERS; POLARIZATION DEPENDENT ABSORBANCE SPECTRUM; QUANTUM DOT INFRARED PHOTODETECTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34748879456     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2007.04.002     Document Type: Article

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