V defects of ZnO thin films grown on Si as an ultraviolet optical path

Applied Physics Letters

Volumn 84, Issue 4, 2004, Pages 502-504

  Yoo, Y Z ^a   Sekiguchi, T ^a   Chikyow, T ^a   Kawasaki, M ^b   Onuma, T ^c   Chichibu, S F ^c,e   Song, J H ^d   Koinuma, H ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^e RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; EXCITONS; INTERFACIAL ENERGY; SCANNING ELECTRON MICROSCOPY; SILICON; SINGLE CRYSTALS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ULTRAVIOLET OPTICAL PATH; V DEFECTS;

THIN FILMS;

EID: 1242352447     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1643535     Document Type: Article

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