Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers

IEEE Photonics Technology Letters

Volumn 12, Issue 12, 2000, Pages 1598-1600

  Larson, M C ^b   Coldren, C W ^a,b,c   Spruytte, S G ^c   Petersen, H E ^b   Harris, J S ^a,c  

^a IEEE

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE SUBSTRATE; LONG WAVELENGTH LASERS; OXIDE APERTURED DEVICES; PULSED THRESHOLD CURRENT DENSITY; SLOPE EFFICIENCY; THERMAL IMPEDANCE; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASERS;

CONTINUOUS WAVE LASERS; CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC IMPEDANCE MEASUREMENT; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS;

SEMICONDUCTOR LASERS;

EID: 0034469623     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.896319     Document Type: Article

References (10)

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