Band structure and optical gain in GaInAsN quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 245-246

  Carrere H ^a   Arnoult, A ^a   Marie, X ^b   Amand, T ^b   Bedel Pereira, E ^a   Potter, R J ^c   Balkan, N ^c  

^a LAAS CNRS   (France)

^b CNRS   (France)

^c UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

Band anticrossing; Band structure; Gain; GaInAsN

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; ELECTRONS; HAMILTONIANS; MATHEMATICAL MODELS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS;

OPTICAL GAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3843137579     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00784-1     Document Type: Conference Paper

References (2)

1. Shan W., Walukiewicz W., Ager III J.W., Haller E.E., Geisz J.F., Friedman D.J., Olson J.M., Kurtz S.R. Phys. Rev. Lett. 82(6):1999;1221.
2. Hai P.N., Chen W.M., Buyanova I.A., Xin H.P., Tu C.W. Appl. Phys. Lett. 77(12):2000;1843.