Optical properties of InGaAsN: A new 1 eV bandgap material system

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3621, Issue , 1999, Pages 52-63

  Jones, E D ^a   Modine, N A ^a   Allerman, A A ^a   Fritz, I J ^a   Kurtz, S R ^a   Wright, A F ^a   Tozer, S T ^a   Wei, X ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ENERGY GAP; LIGHT MEASUREMENT; MAGNETOOPTICAL EFFECTS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

DENSITY FUNCTIONAL THEORY (DFT); INDIUM GALLIUM ARSENIDE NITRIDE; MAGNETOLUMINESCENCE;

LIGHT EMITTING DIODES;

EID: 0032652894     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (35)