Mutual passivation of electrically active and isovalent impurities

Nature Materials

Volumn 1, Issue 3, 2002, Pages 185-189

  Yu, K M ^a   Walukiewicz, W ^a   Wu, J ^a   Mars, D E ^b   R Chamberlin, D ^b   Scarpulla, M A ^a,c   Dubon, O D ^a,c   Geisz, J F ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b AGILENT LABORATORIES   (United States)

^c Lawrence Berkeley National Laboratory   (United States)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; PASSIVATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; THERMODYNAMIC STABILITY;

ISOVALENT IMPURITIES;

GALLIUM ALLOYS;

ALLOY; ARSENIC; GALLIUM; GALLIUM ARSENIDE; GANAS ALLOY; NITROGEN; ORGANOARSENIC DERIVATIVE; SILICON;

ARTICLE; CHEMISTRY; COMPARATIVE STUDY; CRYSTALLIZATION; CRYSTALLOGRAPHY; IMPEDANCE; MATERIALS TESTING; METHODOLOGY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; SYNTHESIS; TEMPERATURE;

ALLOYS; ARSENIC; ARSENICALS; CRYSTALLIZATION; CRYSTALLOGRAPHY; ELECTRIC IMPEDANCE; GALLIUM; MATERIALS TESTING; NITROGEN; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY; SILICON; TEMPERATURE;

EID: 0036877687     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat754     Document Type: Article

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