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Semiconductor Science and Technology

Volumn 17, Issue 8, 2002, Pages 785-796

Ion beam synthesis and n-type doping of group III-Nx-V1-x alloys

(1) Yu, K M a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; FILM GROWTH; GALLIUM ALLOYS; ION BEAMS; ION IMPLANTATION; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SURFACE PHENOMENA; SYNTHESIS (CHEMICAL); THIN FILMS;

HIGHLY MISMATCHED ALLOYS (HMA); SEMICONDUCTING ALLOYS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036678067 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/8/307 Document Type: Article

Times cited : (17)

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