Detailed simulation study of a reverse embedded-SiGe strained-silicon MOSFET

IEEE Transactions on Electron Devices

Volumn 55, Issue 2, 2008, Pages 640-648

  Fiorenza, James G ^a   Park, Ji Soo ^a   Lochtefeld, Anthony ^a  

^a AmberWave Systems Corporation   (United States)

Author keywords

Reverse embedded SiGe (Rev. e SiGe); SiGe; Strain balance; Strained silicon

Indexed keywords

ASPECT RATIO; COMPUTER SIMULATION; GATES (TRANSISTOR); OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TENSILE STRAIN;

CHANNEL STRESS; STRAIN BALANCE; STRAINED-SILICON;

MOSFET DEVICES;

EID: 39749138925     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.913084     Document Type: Article

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