Growth of atomically flat-surface aluminum nitride epitaxial film by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 5 A, 2005, Pages 2987-2992

  Uehara, Kensei ^a   Aota, Yuji ^a   Kameda, Suguru ^a   Nakase, Hiroyuki ^a   Isota, Yoji ^a   Tsubouchi, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Al2o3; AlN; Atomioally flat surfaoe; FWHM of XRC; Mean surface roughness; MOCVD

Indexed keywords

ALUMINA; ALUMINUM NITRIDE; ELECTRIC CONDUCTANCE; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SURFACE ROUGHNESS; SURFACE TREATMENT; THERMAL EFFECTS;

Α-AL2O3; ALN; ATOMICALLY FLAT SURFACE; FWHM OF XRC; MEAN SURFACE ROUGHNESS;

FILM GROWTH;

EID: 22544465259     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2987     Document Type: Article

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