Microwave-frequency InAlP-oxide/GaAs MOSFETs

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 43-46

  Cao, Y ^a   Zhang, J ^a   Kosel, T H ^a   Hall, D C ^a   Fay, P ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GATE DIELECTRICS; GATES (TRANSISTOR); MICROWAVES; MOSFET DEVICES; SEMICONDUCTOR MATERIALS;

COMPOUND SEMICONDUCTOR (CS); GA TE LENGTHS; MICROWAVE FREQUENCY; MICROWAVE PERFORMANCE; MOSFETS; NATIVE OXIDES;

INTEGRATED CIRCUITS;

EID: 39549117941     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319874     Document Type: Conference Paper

References (10)

1. Y.C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, "Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis," IEEE Electron Device Lett., vol. 20, pp. 457-459, 1999.
2. P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, "Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition," Applied Physics Lett., vol. 84, pp. 434-436, 2004.
3. M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, R. Gregory, and D. Nguyen, "High mobility NMOSFET structure with high-k-dielectric," IEEE Electron Device Lett., vol. 26, pp. 713-715, 2005.
4. Y. Cao, X. Li, J. Zhang, P. Fay, T. H. Kosel, and D. C. Hall, "Microwave Performance of GaAs MOSFET With Wet Thermally Oxidized InAlP Gate Dielectric," IEEE Electron Device Lett., vol. 27, pp. 317-319, 2006.
5. A. L. Holmes, "Compound Semiconductor Native Oxide-Based Technologies for Optical and Electrical Devices Grown on GaAs Substrates Using MOCVD," Ph. D. Dissertation, Dept. of Electrical & Computer Engineering, Univ. of Texas at Austin, 1999.
6. P. J. Barrios, D. C. Hall, G. L. Snider, T. H. Kosel, U. Chowdhury, and R. D. Dupuis, "Electrical Properties of InAlP Native Oxides For GaAs-Based MOS Applications," in State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV), Electrochem. Soc. Proc., vol. 2001-1, 2001, pp. 258-264.
7. Y. Cao, J. Zhang, X. Li, T. H. Kosel, P. Fay, D. C. Hall, X. B. Zhang, R. D. Dupuis, J. B. Jasinski, and Z. Liliental-Weber, "Electrical properties of InAlP native oxides for metal-oxide-semiconductor device applications," Applied Physics Lett., vol. 86, article 062105, 2005.
8. X. Li, Y. Cao, D. C. Hall, P. Fay, X. Zhang, and R. D. Dupuis, "Electrical characterization of native-oxide InAlP/GaAs metal-oxide-semiconductor heterostructures using impedance spectroscopy," J. Applied Physics, vol. 95, pp. 4209-4212, 2004.
9. I. H. Tan, G. L. Snider, L. D. Chang, and E. L. Hu, "A Self-Consistent Solution Of Schrodinger-Poisson Equations Using A Nonuniform Mesh," J. Applied Physics, vol. 68, pp. 4071-4076, 1990.
10. X. Li, Y. Cao, D. C. Hall, P. Fay, B. Han, A. Wibowo, and N. Pan, "GaAs MOSFET Using InAlP Native Oxide as Gate Dielectric," IEEE Electron Device Lett., vol. 25, pp. 772-774, 2004.