Nitridation of the SiO 2 /4H-SiC interface studied by surface-enhanced Raman spectroscopy

Applied Surface Science

Volumn 253, Issue 12, 2007, Pages 5411-5414

  Choi, S H ^a   Wang, D ^b   Williams, J R ^c   Park, M ^c   Lu, W ^d   Dhar, S ^a   Feldman, L C ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b FURMAN UNIVERSITY   (United States)

^c AUBURN UNIVERSITY   (United States)

^d FISK UNIVERSITY   (United States)

Author keywords

4H SiC; SERS

Indexed keywords

NITRIDATION; RAMAN SPECTROSCOPY; SILICON CARBIDE;

4H-SIC; INTERFACE STATE DENSITY; POST-NITRIDATION;

SURFACE CHEMISTRY;

EID: 33847669732     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.12.021     Document Type: Article

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