Study and formation of 2D microstructures of sapphire by focused ion beam milling

Microelectronic Engineering

Volumn 85, Issue 3, 2008, Pages 640-645

  Dai, Tao ^a   Kang, Xiangning ^a   Zhang, Bei ^a   Xu, Jun ^a   Bao, Kui ^a   Xiong, Chang ^a   Gan, Zizhao ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Dry etching; Focused ion beam milling; Microstructures; Sapphire

Indexed keywords

COMMINUTION; DRY ETCHING; FOCUSED ION BEAMS; LIGHT EMITTING DIODES; MICROSTRUCTURE; QUASICRYSTALS;

APERIODIC SYMMETRIES; FOCUSED ION BEAM MILLING (FIBM);

SAPPHIRE;

EID: 39149142201     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.11.009     Document Type: Article

References (22)

1. Wang W.K., Wuu D.S., Lin S.H., Han P., Horng R.H., Hsu T.C., Huo D.T., Jou M.J., Yu Y.H., and Lin A. IEEE J. Quantum Electron. 41 (2005) 1403-1409
2. Choi H.W., Liu C., Gu E., McConnell G., Girkin J.M., Watson I.M., and Dawson M.D. Appl. Phys. Lett. 84 (2004) 2253-2255
3. Khizar M., Fan Z.Y., Kim K.H., Lin J.Y., and Jiang H.X. Appl. Phys. Lett. 86 (2005) 173504
4. Han D.S., Kim J.Y., Na S.I., Kim S.H., Lee K.D., Kim B., and Park S.J. IEEE Photon. Technol. Lett. 18 (2006) 1406-1408
5. Lee Y.J., Hwang J.M., Hsu T.C., Hsieh M.H., Jou M.J., Lee B.J., Lu T.C., Kuo H.C., and Wang S.C. IEEE Photon. Technol. Lett. 18 (2006) 1152-1154
6. Wang J., Guo L.W., Jia H.Q., Xiang Z.G., Wang Y., Chen H., and Zhou J.M. Jpn. J. Appl. Phys. 44 28-32 (2005) L982-L984
7. Wuu D.S., Wang W.K., Shih W.C., Horng R.H., Lee C.E., Lin W.Y., and Fang J.S. IEEE Photon. Technol. Lett. 17 (2005) 288-290
8. Yamada M., Mitani T., Narukawa Y., Shioji S., Niki I., Sonobe S., Deguchi K., Sano M., and Mukai T. Jpn. J. Appl. Phys. 41 (2002) L1431-L1433
9. Marinelli C., Sargent L.J., Wonfor A., Rorison J.M., Penty R.V., White I.H., Heard P.J., Hasnain G., and Schneider R. Electron. Lett. 36 (2000) 1706-1707
10. Kotani T., Hatada Y., Funato M., Narukawa Y., Mukai T., Kawakami Y., and Fujita S. Phys. Status Solidi C 2 (2005) 2895-2898
11. Dai T., et al. Phys. Status Solidi C 4 (2007) 196-199
12. Zhang Z.S., Zhang B., Xu J., Xu K., Yang Z.J., Qin Z.X., Yu T.J., and Yu D.P. Appl. Phys. Lett. 88 (2006) 171103
13. Dai T., Zhang B., Zhang Z.S., Liu D., Wang X., Bao K., Kang X.N., Xu J., Yu D.P., and Zhu X. Chinese Phys. Lett. 24 (2007) 979-982
14. Steckl A.J., and Chyr I. J. Vac. Sci. Technol. B 17 (1999) 362-365
15. Lee M.K., and Kuo K.K. Jpn. J. Appl. Phys. 45 (2006) 2447-2450
16. Lee M.K., and Kuo K.K. Electrochem. Solid-State Lett. 10 1 (2007) H20-H22
17. Chyr I., and Steckl A.J. J. Vac. Sci. Technol. B 19 (2001) 2547-2550
18. Mulders J.J.L., de Winter D.A.M., and Duinkerken W.J.H.C.P. Microelectron. Eng. 84 (2007) 1540-1543
19. Oder T.N., Shakya J., Lin J.Y., and Jiang H.X. Appl. Phys. Lett. 82 (2003) 3692-3694
20. Oder T.N., Kim K.H., Lin J.Y., and Jiang H.X. Appl. Phys. Lett. 84 (2004) 466-468
21. Kim D.H., Cho C.O., Roh Y.G., Jeon H., Park Y.S., Cho J., Im J.S., Sone C., Park Y., Choi W.J., and Park Q.H. Appl. Phys. Lett. 87 (2005) 203508
22. Wiere J.J., Krames M.R., Epler J.E., Gardner N.F., Craford M.G., Wendt J.R., Simmons J.A., and Sigalas M.M. Appl. Phys. Lett. 84 (2004) 3885-3887