Improvement of light extraction efficiency of flip-chip light-emitting diode by texturing the bottom side surface of sapphire substrate

IEEE Photonics Technology Letters

Volumn 18, Issue 13, 2006, Pages 1406-1408

  Han, Dae Seob ^a   Kim, Ja Yeon ^a   Na, Seok In ^a   Kim, Sang Hoon ^b,c   Lee, Ki Dong ^b,c   Kim, Bongjin ^c   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b LG Electronics Inc   (South Korea)

^c NINEX Co Ltd   (South Korea)

Author keywords

Dry etching; Extraction efficiency; GaN; Inductively coupled plasma (TCP); Light emitting diodes (LEDs); Light output power; Sapphire etching

Indexed keywords

DRY ETCHING; FLIP CHIP DEVICES; LIGHT SCATTERING; SAPPHIRE; SUBSTRATES; TEXTURES;

FLIP CHIP LIGHT-EMITTING DIODE (FCLED); LIGHT EXTRACTION EFFICIENCY; PERIODIC DISTANCE; SAPPHIRE SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 34047202500     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.877565     Document Type: Article

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