Focused ion beam micromilling of GaN and related substrate materials (sapphire, SiC, and Si)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 2, 1999, Pages 362-365

  Steckl, A J ^a   Chyr, I ^a  

^a University of Cincinnati   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644449878     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590564     Document Type: Article

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