Threshold current reduction in InGaN MQW laser diode with λ/4 air/semiconductor Bragg reflectors

Electronics Letters

Volumn 36, Issue 20, 2000, Pages 1706-1707

  Marinelli, C ^a   Sargent, L J ^a   Wonfor, A ^a   Rorison, J M ^a   Penty, R V ^a   White, I H ^a   Heard, P J ^a   Hasnain, G ^b   Schneider, R ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b AGILENT LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ION BEAMS; MIRRORS; QUANTUM ELECTRONICS; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS;

BRAGG REFLECTORS; THRESHOLD CURRENT REDUCTION;

QUANTUM WELL LASERS;

EID: 0034275055     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001230     Document Type: Article

References (7)

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3. HOFSTETTER, D., THORNTON, R.L., ROMANO, L.T., BOUR, D.P., KNEISSL, M., and DONALDSON, R.M.: 'Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser', Appl. Phys. Lett., 1998, 73, pp. 2158-2160
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6. YUAN, Y., BROCK, T., BHATTACHARYA, P., CANEU, C., and BHAT, R.: 'Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors', IEEE Photonics Technol. Lett., 1997, 9, pp. 881-883
7. NAKAMURA, S.: 'Characteristics of room temperature CW-operated InGaN multiquantum-well laser diodes', MRS Internet J. Nitride Semicond. Res., 1997, 2, (Art. 5)