SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 92, Issue 5, 2008, Pages

The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTeZnTe quantum dots

(3) Lee, H S a Park, H L a Kim, T W b

a Yonsei University (South Korea)

b Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CADMIUM ALLOYS; ELECTRONIC PROPERTIES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

ELECTRONIC SUBBAND; PHOTOLUMINESCENCE SPECTRA;

SEMICONDUCTOR QUANTUM DOTS;

EID: 38949123965 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2841711 Document Type: Article

Times cited : (26)

References (22)

1
- 0035473608
- APPLAB 0003-6951 10.1063/1.1405422.
- K. Kawasaki, D. Yamazaki, A. Kinoshita, H. Hirayama, K. Tsutsui, and Y. Aoyagi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1405422 79, 2243 (2001).
- (2001) Appl. Phys. Lett. , vol.79 , pp. 2243
- Kawasaki, K.¹ Yamazaki, D.² Kinoshita, A.³ Hirayama, H.⁴ Tsutsui, K.⁵ Aoyagi, Y.⁶

2
- 33745711553
- JAPIAU 0021-8979 10.1063/1.2205349.
- K. P. Singh, S. Lamba, S. K. Joshi, and S. Lamba, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2205349 99, 124503 (2006).
- (2006) J. Appl. Phys. , vol.99 , pp. 124503
- Singh, K.P.¹ Lamba, S.² Joshi, S.K.³ Lamba, S.⁴

3
- 37649026934
- PRBMDO 0163-1829 10.1103/PhysRevB.69.235314.
- T. R. Nielsen, P. Gartner, and F. Jahnke, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.235314 69, 235314 (2004).
- (2004) Phys. Rev. B , vol.69 , pp. 235314
- Nielsen, T.R.¹ Gartner, P.² Jahnke, F.³

4
- 5444224684
- APPLAB 0003-6951 10.1063/1.1794379.
- G. M. Lewis, J. Lutti, P. M. Smowton, P. Blood, A. B. Krysa, and S. L. Liew, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1794379 85, 1904 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1904
- Lewis, G.M.¹ Lutti, J.² Smowton, P.M.³ Blood, P.⁴ Krysa, A.B.⁵ Liew, S.L.⁶

5
- 2342572865
- APPLAB 0003-6951 10.1063/1.1687979.
- M. T. Todaro, M. De Giorgi, V. Tasco, M. De Vittorio, R. Cingolani, and A. Passaseo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1687979 84, 2482 (2004).
- (2004) Appl. Phys. Lett. , vol.84 , pp. 2482
- Todaro, M.T.¹ De Giorgi, M.² Tasco, V.³ De Vittorio, M.⁴ Cingolani, R.⁵ Passaseo, A.⁶

6
- 18844410552
- JAPIAU 0021-8979 10.1063/1.1884752.
- F. Hatami, V. Lordi, J. S. Harris, H. Kostial, and W. T. Masselink, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1884752 97, 096106 (2005).
- (2005) J. Appl. Phys. , vol.97 , pp. 096106
- Hatami, F.¹ Lordi, V.² Harris, J.S.³ Kostial, H.⁴ Masselink, W.T.⁵

7
- 0037115622
- JAPIAU 0021-8979 10.1063/1.1517750.
- Z. Ye, J. C. Campbell, Z. Chen, E.-T. Kim, and A. Madhukar, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1517750 92, 7462 (2002).
- (2002) J. Appl. Phys. , vol.92 , pp. 7462
- Ye, Z.¹ Campbell, J.C.² Chen, Z.³ Kim, E.-T.⁴ Madhukar, A.⁵

8
- 11144357602
- APPLAB 0003-6951 10.1063/1.1688982.
- J. Jiang, S. Tsao, T. O'Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, M. Razeghi, G. J. Brown, and M. Z. Tidrow, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1688982 84, 2166 (2004).
- (2004) Appl. Phys. Lett. , vol.84 , pp. 2166
- Jiang, J.¹ Tsao, S.² O'Sullivan, T.³ Zhang, W.⁴ Lim, H.⁵ Sills, T.⁶ Mi, K.⁷ Razeghi, M.⁸ Brown, G.J.⁹ Tidrow, M.Z.¹⁰

9
- 0037091505
- JAPIAU 0021-8979 10.1063/1.1436560.
- L. Marsal, L. Besombes, F. Tinjod, K. Kheng, A. Wasiela, B. Gilles, J.-L. Rouvìre, and H. Mariette, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1436560 91, 4936 (2002).
- (2002) J. Appl. Phys. , vol.91 , pp. 4936
- Marsal, L.¹ Besombes, L.² Tinjod, F.³ Kheng, K.⁴ Wasiela, A.⁵ Gilles, B.⁶ Rouvìre, J.-L.⁷ Mariette, H.⁸

10
- 0037065045
- APPLAB 0003-6951 10.1063/1.1517716.
- H. S. Lee, K. H. Lee, J. C. Choi, H. L. Park, T. W. Kim, and D. C. Choo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1517716 81, 3750 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 3750
- Lee, H.S.¹ Lee, K.H.² Choi, J.C.³ Park, H.L.⁴ Kim, T.W.⁵ Choo, D.C.⁶

11
- 0036640236
- JAPIAU 0021-8979 10.1063/1.1481959.
- J. Brault, M. Gendry, G. Grenet, G. Hollinger, J. Olivares, B. Salem, T. Benyattou, and G. Bremond, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1481959 92, 506 (2002).
- (2002) J. Appl. Phys. , vol.92 , pp. 506
- Brault, J.¹ Gendry, M.² Grenet, G.³ Hollinger, G.⁴ Olivares, J.⁵ Salem, B.⁶ Benyattou, T.⁷ Bremond, G.⁸

12
- 12844273793
- APPLAB 0003-6951 10.1063/1.1832749.
- H. S. Lee, H. L. Park, and T. W. Kim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1832749 85, 5598 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 5598
- Lee, H.S.¹ Park, H.L.² Kim, T.W.³

13
- 34247855082
- APPLAB 0003-6951 10.1063/1.2734479.
- H. S. Lee, H. L. Park, and T. W. Kim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2734479 90, 181909 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 181909
- Lee, H.S.¹ Park, H.L.² Kim, T.W.³

14
- 0037439341
- JAPIAU 0021-8979 10.1063/1.1530717.
- Y. Ji, W. Lu, G. Chen, X. Chen, and Q. Wang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1530717 93, 1208 (2003).
- (2003) J. Appl. Phys. , vol.93 , pp. 1208
- Ji, Y.¹ Lu, W.² Chen, G.³ Chen, X.⁴ Wang, Q.⁵

15
- 17044372804
- APPLAB 0003-6951 10.1063/1.1854199.
- Z. L. Miao, Y. W. Zhang, S. J. Chua, Y. H. Chye, P. Chen, and S. Tripathy, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1854199 86, 031914 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 031914
- Miao, Z.L.¹ Zhang, Y.W.² Chua, S.J.³ Chye, Y.H.⁴ Chen, P.⁵ Tripathy, S.⁶

16
- 33644608491
- JAPIAU 0021-8979 10.1063/1.2173188.
- H. Y. Liu, M. J. Steer, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, F. Suarez, J. S. Ng, M. Hopkinson, and J. P. R. David, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2173188 99, 046104 (2006).
- (2006) J. Appl. Phys. , vol.99 , pp. 046104
- Liu, H.Y.¹ Steer, M.J.² Badcock, T.J.³ Mowbray, D.J.⁴ Skolnick, M.S.⁵ Suarez, F.⁶ Ng, J.S.⁷ Hopkinson, M.⁸ David, J.P.R.⁹

17
- 0029635435
- APPLAB 0003-6951 10.1063/1.114519.
- M.-E. Pistol, N. Carlsson, C. Persson, W. Seifert, and L. Samuelson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.114519 67, 1438 (1995).
- (1995) Appl. Phys. Lett. , vol.67 , pp. 1438
- Pistol, M.-E.¹ Carlsson, N.² Persson, C.³ Seifert, W.⁴ Samuelson, L.⁵

18
- 0242523816
- PRBMDO 0163-1829 10.1103/PhysRevB.68.125303.
- M. K.-J. Johansson, U. Hakanson, M. Holm, J. Persson, T. Sass, J. Johansson, C. Pryor, L. Montelius, W. Seifert, L. Samuelson, and M.-E. Pistol, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.125303 68, 125303 (2003).
- (2003) Phys. Rev. B , vol.68 , pp. 125303
- Johansson, M.K.-J.¹ Hakanson, U.² Holm, M.³ Persson, J.⁴ Sass, T.⁵ Johansson, J.⁶ Pryor, C.⁷ Montelius, L.⁸ Seifert, W.⁹ Samuelson, L.¹⁰ Pistol, M.-E.¹¹

19
- 0028461711
- APPLAB 0003-6951 10.1063/1.112363.
- S. M. Wang, J. V. Thordson, T. G. Andersson, S. Jiang, L. X. Yang, and S. C. Shen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.112363 65, 336 (1994).
- (1994) Appl. Phys. Lett. , vol.65 , pp. 336
- Wang, S.M.¹ Thordson, J.V.² Andersson, T.G.³ Jiang, S.⁴ Yang, L.X.⁵ Shen, S.C.⁶

20
- 79956051001
- APPLAB 0003-6951 10.1063/1.1500778.
- F. Ferdos, S. Wang, Y. Wei, A. Larsson, M. Sadeghi, and Q. Zhao, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1500778 81, 1195 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1195
- Ferdos, F.¹ Wang, S.² Wei, Y.³ Larsson, A.⁴ Sadeghi, M.⁵ Zhao, Q.⁶

21
- 0000923816
- See, for example, Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York), Vol.,.
- See, for example, E. W. Williams and H. B. Bebb, Semiconductors and Semimetals, edited by, R. K. Willardson, and, A. C. Beer, (Academic, New York, 1992), Vol. 8, p. 321.
- (1992) , vol.8 , pp. 321
- Williams, E.W.¹ Bebb, H.B.²

22
- 21944440380
- APPLAB 0003-6951 10.1063/1.122576.
- H. Saito, K. Nishi, and S. Sugou, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122576 73, 2742 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2742
- Saito, H.¹ Nishi, K.² Sugou, S.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.