Role of defects in transport through a quantum dot single electron transistor

Journal of Applied Physics

Volumn 99, Issue 12, 2006, Pages

  Singh, K P ^a,c,d   Lamba, Subhalakshmi ^a   Joshi, S K ^a   Lamba, Sushil ^b  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b Recruitment and Assessment Centre   (India)

^c JAMIA MILLIA ISLAMIA CENTRAL UNIVERSITY   (India)

^d ICAR INDIAN INSTITUTE OF MAIZE RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRON TRANSITIONS; ELECTRON TUNNELING; FABRICATION; MORPHOLOGY; STRENGTH OF MATERIALS;

CONDUCTANCE PROFILE; DEVICE FABRICATION; INTERDOT INTERACTION; SINGLE DOTLIKE DEFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745711553     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2205349     Document Type: Article

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