High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2166-2168

  Jiang, J ^a   Tsao, S ^a   O'Sullivan, T ^a   Zhang, W ^a   Lim, H ^a   Sills, T ^a   Mi, K ^a   Razeghi, M ^a   Brown, G J ^b   Tidrow, M Z ^c  

^a Northwestern University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DARK CURRENTS; PHOTORESPONSE; QUANTUM DOT INFRARED PHOTODETECTORS (QDIP);

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; ELECTRIC CURRENTS; INFRARED RADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

PHOTODETECTORS;

EID: 11144357602     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1688982     Document Type: Article

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