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Volumn 84, Issue 14, 2004, Pages 2482-2484

1.31 μm InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemical-vapor deposition

(6) Todaro, M T a,b De Giorgi, M a Tasco, V a De Vittorio, M a Cingolani, R a Passaseo, A a

a INFM (Italy)

b Inst Sup Univ Formazione I (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; ELECTROLUMINESCENCE; GROUND STATE; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; QUENCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; TRANSPARENCY;

EXCITED STATE TRANSITIONS; FULL WIDTH AT HALF MAXIMUM (FWHM); GROUND STATE TRANSITIONS; QUANTUM DOT DENSITY;

LIGHT EMITTING DIODES;

EID: 2342572865 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1687979 Document Type: Article

Times cited : (20)

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