Full chip model based correction of flare-induced linewidth variation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 1, 2004, Pages 700-710

  Word, James ^a   Belledent, Jerome ^b   Trouiller, Yorick ^c   Maurer, Wilhelm ^a   Granik, Yuri ^a   Sahouria, Emile ^a   Toublan, Olivier ^a  

^a MENTOR GRAPHICS CORPORATION   (United States)

^b NXP SEMICONDUCTORS   (Netherlands)

^c STMICROELECTRONICS   (France)

Author keywords

Density; Flare; Long Range; Model Based; OPC; Photolithography

Indexed keywords

DENSITY; FLARE; LONG RANGE; MODEL BASED; OPTICAL PROXIMITY CORRECTION (OPC);

ARRAYS; COHERENT LIGHT; COMPUTATION THEORY; ERROR CORRECTION; LIGHT SCATTERING; LIGHTING;

PHOTOLITHOGRAPHY;

EID: 19844379302     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.569175     Document Type: Conference Paper

References (6)

1. Anatoly Bourov et. al. "Impact of Flare on CD Variation for 248nm and 193nm Lithography Systems," SPIE Vol. 4346 (2001), pp. 1388-1393.
2. Emanuelle Luce et. al. "Flare Impact on the Intrafield CD Control for sub-0.25um Patterning," Vol. 3679 (1999), pp. 368-381.
3. Hiroki Futatsuya et. al. "Model-based OPC/DRC Considering Local Flare Effects," SPIE Vol. 5377 (2004), pp. 451-458.
4. Teruyoshi Yao et. al. "Local Flare Effects and Correction in ArF Lithography," Symposium on VLSI Technology Digest of Technical Papers, (2003),
5. J.P. Kirk "Scattered Light in Photolithographic Lenses," SPIE Vol. 2197 (1994), pp. 566-572.
6. Chris A. Mack "Measuring and Modeling Flare in Optical Lithography," SPIE Vol. 5040 (2003), pp. 151-161.