Enhanced dopant solubility in strained silicon

Physica Status Solidi C: Conferences

Volumn 2, Issue 6, 2005, Pages 1953-1957

  Adey, J ^a   Jones, R ^a   Briddon, P R ^b  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b Physics Centre   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; LATTICE CONSTANTS; PROBABILITY DENSITY FUNCTION; SOLUBILITY; TENSILE STRENGTH; X RAY SCATTERING;

EQUILIBRIUM SOLUBILITY; IONIZED ACCEPTOR; TENSILE STRAIN;

SILICON;

EID: 27344437057     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460535     Document Type: Conference Paper

References (6)

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3. G. S. Cargill, III, J. Angilello, and K. L. Kavanagh, Phys. Rev. Lett. 61, 1748 (1988).
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5. S. M. Sze, in: Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New York, 1981), pp. 16-27.
6. M. Cardona and N. E. Christensen, Phys. Rev. B 35, 6182 (1987).