Groups III and v impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals

Applied Physics Letters

Volumn 89, Issue 7, 2006, Pages

  Duffy, R ^a   Dao, T ^a   Tamminga, Y ^a   Van Der Tak, K ^a   Roozeboom, F ^a   Augendre, E ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; IMPURITIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SOLUBILITY;

FLASH ANNEAL; LASER ANNEAL; RUTHERFORD BACKSCATTERING CHANNELING ANALYSIS; SOLID-PHASE-EPITAXIAL REGROWTH;

SILICON;

EID: 33747465881     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337081     Document Type: Article

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