High-temperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence extended x-ray absorption fine structure

Journal of Applied Physics

Volumn 79, Issue 12, 1996, Pages 9037-9042

  Revenant Brizard, C ^a   Regnard, J R ^a,d   Solmi, S ^b   Armigliato, A ^b   Valmorri, S ^b   Cellini, C ^c   Romanato, F ^c  

^a CEA GRENOBLE   (France)

^b CNR   (Italy)

^c INFM   (Italy)

^d UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000441826     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362636     Document Type: Article

References (21)

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