Large enhancement of boron solubility in silicon due to biaxial stress

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4738-4740

  Sadigh, Babak ^a   Lenosky, Thomas J ^a   Caturla, Maria Jose ^a   Quong, Andrew A ^a   Benedict, Lorin X ^a   Diaz De La Rubia, Tomas ^a   Giles, Martin M ^b   Foad, Majeed ^c   Spataru, Catalin D ^d   Louie, Steven G ^d  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b INTEL CORPORATION   (United States)

^c APPLIED MATERIALS INC   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRESS; FIRST-PRINCIPLES; INTRINSIC PROPERTY; SEMICONDUCTOR INDUSTRY; SOLID SOLUBILITIES;

BORON; BORON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SOLUBILITY;

SEMICONDUCTING SILICON;

EID: 79956034555     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484557     Document Type: Article

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