Electrical conductivity of ultra-thin silicon nanowires

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 159-163

  Rochdi, Nabil ^a   Tonneau, Didier ^a   Jandard, Franck ^a   Dallaporta, Herv́ ^a   Safarov, Viatcheslav ^a   Gautier, Jacques ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE TRAPPING; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; LITHOGRAPHY; SILICON;

DRAIN-SOURCE; GATE VOLTAGES; INSULATOR SUBSTRATES;

NANOWIRES;

EID: 38849176958     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2823056     Document Type: Article

References (18)

1. International Technology Roadmap for Semiconductors, http://public.itrs. net
2. Y. Cui, X. Duan, J. Hu, and C. M. Lieber, J. Phys. Chem. B JPCBFK 1089-5647 10.1021/jp0009305 104, 5213 (2000).
3. Y. Cui and C. M. Lieber, Science SCIEAS 0036-8075 10.1126/science.291. 5505.851 291, 851 (2001).
4. A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2168496 88, 053121 (2006).
5. A. J. Ferguson, D. G. Hasko, and H. Ahmed, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1577826 82, 4492 (2003).
6. A. Francinelli, D. Tonneau, N. Clement, H. Abed, F. Jandard, S. Nitsche, H. Dallaporta, V. Safarov, and J. Gautier, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1830082 85, 5272 (2004).
7. N. Clement, D. Tonneau, H. Dallaporta, V. Bouchiat, D. Fraboulet, D. Mariole, J. Gautier, and V. Safarov, Physica E (Amsterdam) PELNFM 1386-9477 10.1016/S1386-9477(02)00288-6 13, 999 (2002).
8. J. T. Sheu, C. C. Chen, K. S. You, and S. T. Tsai, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1826060 22, 3154 (2004).
9. H. Fujii, T. Matsukawa, S. Kanemaru, H. Yokoyama, and J. Itoh, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1365416 78, 2560 (2001).
10. H. Fujii, S. Kanemaru, T. Matsukawa, and J. Itoh, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125514 75, 3986 (1999).
11. N. Clement, A. Francinelli, D. Tonneau, F. Jandard, H. Dallaporta, D. Fraboulet, J. Gautier, and V. Safarov, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1561573 82, 1727 (2003).
12. J. A. Dagata, T. Inoue, J. Itoh, K. Matsumoto, and H. Yokoyama, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368986 84, 6891 (1998).
13. F. Marchi, V. Bouchiat, H. Dallaporta, V. Safarov, and D. Tonneau, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.590325 16, 2952 (1998).
14. N. Clement, D. Tonneau, B. Gely, H. Dallaporta, V. Safarov, and J. Gautier, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1620513 21, 2348 (2003).
15. R. Garcia, M. Calleja, and H. Rohrer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.370985 86, 1898 (1999).
16. R. Garcia, M. Calleja, and F. Rerez-Murano, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.121340 72, 2295 (1998).
17. For a description of Smart-Cut®, see SOITEC web site: www.soitec.com
18. J. P. Colinge, MRS Bull. 23, 16 (1998). 0883-7694