Nanoflash device with self-aligned double floating gates using scanning probe lithography and tetramethylammonium hydroxide wet etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 3154-3157

  Sheu, J T ^a,b   Chen, C C ^c   You, K S ^a   Tsai, S T ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ANISOTROPY; CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; ELECTRON TUNNELING; ETCHING; FLASH MEMORY; GATES (TRANSISTOR); MICROSCOPIC EXAMINATION; OXIDATION; PHOTOLITHOGRAPHY;

FLOATING GATES; NANOWIRES; SCANNING PROBE LITHOGRAPHY (SPL) TECHNOLOGY; TETRAMETHYLAMMONIUM HYDROXIDE; WET ETCHING;

NANOSTRUCTURED MATERIALS;

EID: 13244294191     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1826060     Document Type: Conference Paper

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