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Volumn 82, Issue 25, 2003, Pages 4492-4494

Variable coupling in n-type silicon-germanium double quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; GERMANIUM; SILICON;

EID: 0038044801     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1577826     Document Type: Article
Times cited : (14)

References (15)
  • 14
    • 0003423226 scopus 로고
    • Plenum and NATO Scientific Affairs Division, New York/London
    • H. Grabert and M. H. Devoret, Single Charge Tunnelling (Plenum and NATO Scientific Affairs Division, New York/London, 1992).
    • (1992) Single Charge Tunnelling
    • Grabert, H.1    Devoret, M.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.