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Volumn 8, Issue 1, 2008, Pages 189-194

Monitoring single-molecule reactivity on a carbon nanotube

Author keywords

[No Author keywords available]

Indexed keywords

CARBOXYLATE GROUPS; SINGLE-MOLECULE REACTIVITY; STATISTICAL ACCURACY; TURNOVER TIME;

EID: 38749100521     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0724079     Document Type: Article
Times cited : (66)

References (34)
  • 17
    • 38749098300 scopus 로고    scopus 로고
    • Phosphate buffer prepared using dibasic sodium phosphate (Fisher Scientific) and phosphoric acid (pH 4.5) diluted with DI water to 0.02 M.
    • Phosphate buffer prepared using dibasic sodium phosphate (Fisher Scientific) and phosphoric acid (pH 4.5) diluted with DI water to 0.02 M.
  • 21
    • 38749110551 scopus 로고    scopus 로고
    • Overoxidized devices, which presumably contain multiple carboxylates, often recover less than 1% of their initial conductance
    • Overoxidized devices, which presumably contain multiple carboxylates, often recover less than 1% of their initial conductance.
  • 30
    • 20044369818 scopus 로고    scopus 로고
    • Low-frequency noise in nanomaterials and nano-structures
    • Balandin, A, Ed, American Scientific: Valencia, CA
    • Mihaila, M. N. Low-frequency noise in nanomaterials and nano-structures. In Noise and fluctuations control in electronic devices; Balandin, A., Ed.; American Scientific: Valencia, CA, 2002.
    • (2002) Noise and fluctuations control in electronic devices
    • Mihaila, M.N.1
  • 33
    • 38749133882 scopus 로고    scopus 로고
    • We do not expect, and have not observed, diffusion-limited processes using concentrations down to 10 μM
    • We do not expect, and have not observed, diffusion-limited processes using concentrations down to 10 μM.
  • 34
    • 38749102141 scopus 로고    scopus 로고
    • A substantial fraction of the 100 mV applied voltage bias is dissipated at the site of point-functionalization, providing many kT to the excitation of energetically deep two-level systems.
    • A substantial fraction of the 100 mV applied voltage bias is dissipated at the site of point-functionalization, providing many kT to the excitation of energetically deep two-level systems.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.