Room-temperature single charge sensitivity in carbon nanotube field-effect transistors

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Peng, H B ^a   Hughes, M E ^b   Golovchenko, J A ^a,b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CURRENT FLUCTUATION STUDIES; SINGLE CHARGE SENSITIVITY; SINGLE MOLECULE SENSORS; SOURCE-DRAIN CURRENT;

ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON TRAPS; FIELD EFFECT TRANSISTORS; SENSITIVITY ANALYSIS; SIGNAL PROCESSING; SWITCHING FUNCTIONS; TELEGRAPH;

CARBON NANOTUBES;

EID: 33845721772     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2399942     Document Type: Article

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