In situ monitoring of the etching of thin silicon oxide films in diluted NH4F by IR ellipsometry

Electrochemistry Communications

Volumn 10, Issue 2, 2008, Pages 315-318

  Hinrichs, Karsten ^a   Roodenko, Katy ^a   Rappich, Jörg ^b  

^a ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Ellipsometry; In situ monitoring; IR reflection spectroscopy; Silicon oxide

Indexed keywords

ELECTROCHEMISTRY; ELLIPSOMETRY; ETCHING; INFRARED SPECTROSCOPY; SILICON COMPOUNDS;

INFRARED SPECTROSCOPIC ELLIPSOMETRY (IRSE); QUANTITATIVE EVALUATIONS; SILICON OXIDES;

THIN FILMS;

EID: 38649103471     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2007.12.014     Document Type: Article

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