Electronic and surface properties during the etch-back of anodic oxides on Si(1 1 1) surfaces in 40% NH4F solution

Journal of Micromechanics and Microengineering

Volumn 17, Issue 4, 2007, Pages

  Yang, F ^a   Roodenko, K ^b   Hinrichs, K ^b   Rappich, J ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; ELECTRONIC STRUCTURE; ETCHING; PHOTOLUMINESCENCE; SPECTROSCOPIC ELLIPSOMETRY; SURFACE PROPERTIES;

OXIDE ETCHING; OXIDE THICKNESS; SILICON SURFACE; SURFACE CHARGING;

SEMICONDUCTING SILICON;

EID: 34249035204     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/17/4/S05     Document Type: Conference Paper

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