Annealing effects on the structural and electrical properties of SiOC(-H) films with low dielectric constant prepared by plasma-enhanced chemical vapor deposition

Journal of the Korean Physical Society

Volumn 45, Issue 1, 2004, Pages 175-179

  Xu, Jun ^a,b   Yang, Chang Shil ^a   Choi, Chi Kyu ^a  

^a Jeju National University   (South Korea)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Dielectric constant; ICPCVD; Nano pore; SiOC( H) film

Indexed keywords

EID: 3843147107     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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