Formation of Si-based organic thin films with low dielectric constant by using remote plasma enhanced chemical vapor deposition from hexamethyldisiloxane

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 457-460

  Fujii, Toshiaki ^a   Hiramatsu, Mineo ^a   Nawata, Masahito ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Dielectrics

Indexed keywords

BENZENE; DIELECTRIC FILMS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES; ULSI CIRCUITS;

HEXAMETHYLDISILOXANE; INDUCTIVELY COUPLED PLASMA (ICP); ORGANIC THIN FILMS;

THIN FILMS;

EID: 0032676843     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01693-9     Document Type: Article

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