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Thin Solid Films

Volumn 414, Issue 1, 2002, Pages 1-6

Characterization of porous silicate for ultra-low k dielectric application

(7) Liu, Po Tsun a Chang, T C a,b Hsu, K C c Tseng, T Y c Chen, L M d Wang, C J d Sze, S M a,c

a NATIONAL NANO DEVICE LABORATORIES (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

Dielectric constant; Porous silicate films; Thermal stability

Indexed keywords

PERMITTIVITY; POROUS MATERIALS; SILICATES; THERMODYNAMIC STABILITY;

ON CHIP INSULATORS;

DIELECTRIC FILMS;

EID: 0036647654 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(02)00423-6 Document Type: Article

Times cited : (27)

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