EUV absorbance and dry-etching characteristics of TaGeN films for EUVL mask absorber

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5374, Issue PART 1, 2004, Pages 281-288

  Tanaka, Yuusuke ^a   Kim, Dongwan ^a   Yamanashi, Hiromasa ^a   Nishiyama, Iwao ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Absorbance; Absorption coefficient; Contrast; Cr; Etching; EUV; Mask; Reflectivity; Selectivity; TaGeN

Indexed keywords

CHROMIUM; DRY ETCHING; LIGHT ABSORPTION; LIGHT REFLECTION; MASKS; PHOTOLITHOGRAPHY; PLASMA ETCHING; TANTALUM COMPOUNDS; ULTRAVIOLET RADIATION;

ABSORPTION COEFFICIENTS; CONTRAST; EUV; EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY; TAGEN;

OPTICAL FILMS;

EID: 3843119799     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536042     Document Type: Conference Paper

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